BFN 39 H6327

BFN39 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary types: BFN38 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type BFN39 Marking BFN39 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 200 Peak collector current, tp ≤ 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V mA TS ≤ 124 °C -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit ≤ 17 K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-07-25 BFN39 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 300 - - V(BR)CBO 300 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 250 V, IE = 0 - - 0.1 VCB = 250 V, IE = 0 , TA = 150 °C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 30 - - VCEsat - - 0.5 VBEsat - - 0.9 fT - 100 - MHz Ccb - 2.5 - pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 MHz, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-07-25 BFN39 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Collector current IC = ƒ(VBE ) VCE = 10V BFN 37/39 EHP00642 10 3 BFN 37/39 EHP00641 mA 5 ΙC h FE 10 2 10 2 5 5 10 1 5 10 1 10 0 5 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 10 -1 3 0 0.5 ΙC BFN 37/39 1.5 V BE Collector cutoff current ICBO = ƒ(TA) VCBO = 200 V 10 4 nA V 1.0 Transition frequency fT = ƒ(IC) VCE = 10 V EHP00644 10 3 BFN 37/39 EHP00643 MHz Ι CB0 max 10 3 5 fT 10 2 5 10 2 typ 10 1 5 5 10 0 5 10 -1 0 50 10 1 10 0 ˚C 150 100 5 10 1 5 10 2 mA 5 10 3 ΙC TA 3 2011-07-25 BFN39 Collector-base capacitance Ccb = ƒ(VCB) Total power dissipation P tot = ƒ(TS) Emitter-base capacitance Ceb = ƒ(VEB) 90 1.8 pF 70 60 Ptot CCB(CEB ) W 1.2 50 0.9 40 CEB 30 0.6 20 0.3 10 CCB 0 0 4 8 12 16 V 0 0 22 VCB(VEB 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 3 BFN 37/39 Ptot max 5 Ptot DC EHP00254 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-07-25 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BFN39 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 5 2011-07-25 BFN39 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-07-25